Question &AnswerPIE
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´ð£ºProcess Integration Engineer(¹¤ÒÕÕûºÏ¹¤³Ìʦ), Ö÷Òª¹¤×÷ÊÇÕûºÏ¸÷²¿ÃŵÄ×ÊÔ´, ¶Ô¹¤ÒÕ³ÖÐø½øÐиÄÉÆ, È·±£²úÆ·µÄÁ¼ÂÊ£¨yield£©Îȶ¨Á¼ºÃ¡£ 200mm£¬300mm Wafer ´ú±íºÎÒâÒå?
´ð£º8´ç¹èƬ(wafer)Ö±¾¶Îª 200mm , Ö±¾¶Îª 300mm¹èƬ¼´12´ç. Ä¿Ç°ÖÐо¹ú¼ÊÏÖÓеÄÈý¸ö¹¤³§²ÉÓöàÉÙmmµÄ¹èƬ(wafer)¹¤ÒÕ£¿Î´À´±±¾©µÄFab4(Ëij§)²ÉÓöàÉÙmmµÄwafer¹¤ÒÕ£¿
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ÎÒÃÇΪºÎÐèÒª300mm?
´ð£ºwafer size ±ä´ó£¬µ¥Ò»wafer ÉϵÄоƬÊý(chip)±ä¶à£¬µ¥Î»³É±¾½µµÍ 200¡ú300 Ãæ»ýÔö¼Ó2.25±¶,оƬÊýÄ¿Ô¼Ôö¼Ó2.5±¶
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´ð£ºN-type wafer ÊÇÖ¸²ôÔÓ negativeÔªËØ(5¼ÛµçºÉÔªËØ£¬ÀýÈ磺P¡¢As)
µÄ¹èƬ, P-type µÄwafer ÊÇÖ¸²ôÔÓ positive ÔªËØ(3¼ÛµçºÉÔªËØ, ÀýÈ磺B¡¢In)µÄ¹èƬ¡£
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8. ¹¤³§ÖйèƬ£¨wafer£©µÄÖÆÔì¹ý³Ì¿É·ÖÄļ¸¸ö¹¤ÒÕ¹ý³Ì(module)£¿
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´ð£º¼¸P¼¸M´ú±í¹èƬµÄÖÆÔìÓм¸²ãµÄPoly(¶à¾§¹è)ºÍ¼¸²ãµÄmetal(½ðÊôµ¼Ïß).Ò»°ã0.15um µÄÂß¼²úƷΪ1P6M( 1²ãµÄPolyºÍ6²ãµÄmetal)¡£¶ø ¹âÕÖ²ãÊý£¨mask layer£©´ú±í¹èƬµÄÖÆÔì±ØÐè¾¹ý¼¸´ÎµÄPHOTO£¨¹â¿Ì£©. WaferÏÂÏߵĵÚÒ»µÀ²½ÖèÊÇÐγÉstart oxide ºÍzero layer? ÆäÖÐstart oxide µÄÄ¿µÄÊÇΪºÎ£¿
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11. ΪºÎÐèÒªzero layer?
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¶Ô×¼µÄ»ù×¼¡£ 12. Laser markÊÇʲçÛÓÃ;? Wafer ID ÓÖ´ú±íʲçÛÒâÒå?
´ð£ºLaser mark ÊÇÓÃÀ´¿Ìwafer ID, Wafer ID ¾ÍÈçͬ¹èƬµÄÉí·ÝÖ¤Ò»Ñù,
Ò»¸öID´ú±íһƬ¹èƬµÄÉí·Ý¡£ 13. Ò»°ã¹èƬµÄÖÆÔì(wafer process)¹ý³Ì°üº¬ÄÄЩÖ÷Òª²¿·Ö£¿
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15. STI ÊÇʲçÛµÄËõд? ΪºÎÐèÒªSTI?
´ð£ºSTI: Shallow Trench Isolation(dz¹µµÀ¸ôÀë)£¬STI¿ÉÒÔµ±×öÁ½¸ö×é¼þ
£¨device£©¼äµÄ×è¸ô, ±ÜÃâÁ½¸ö×é¼þ¼äµÄ¶Ì·.
16. AA ÊÇÄÄÁ½¸ö×ÖµÄËõд? ¼òµ¥ËµÃ÷ AA µÄÓÃ;?
´ð£ºActive Area, ¼´ÓÐÔ´Çø£¬ÊÇÓÃÀ´½¨Á¢¾§Ìå¹ÜÖ÷ÌåµÄλÖÃËùÔÚ£¬ÔÚÆäÉÏ
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¢ÛSTI etch ºóµÄCD³ß´ç´óС¿ØÖÆ¡£ (CD control, CD=critical dimension) 18.
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19. Ò»°ãµÄÚåÇøÀë×Ó×¢Èëµ÷ÕûµçÐÔ¿É·ÖΪÄÇÈýµÀ²½Öè? ¹¦ÄÜΪºÎ£¿
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µç×ÓÌØÐÔ£¬Ò»°ã°üº¬ÏÂÃ漸µÀ²½Ö裺 ¢ÙWell Implant £ºÐγÉN,P ÚåÇø£»
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20. Ò»°ãµÄÀë×Ó×¢Èë²ã´Î£¨Implant layer£©¹¤ÒÕÖÆÔì¿É·ÖΪÄǼ¸µÀ²½Öè? ´ð£ºÒ»°ã°üº¬ÏÂÃ漸µÀ²½Ö裺
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21. Poly£¨¶à¾§¹è£©Õ¤¼«ÐγɵIJ½Öè´óÖ¿ɷÖΪÄÇЩ?
´ð£º¢ÙGate oxide(Õ¤¼«Ñõ»¯²ã)µÄ³Á»ý£»
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22. Poly£¨¶à¾§¹è£©Õ¤¼«µÄ¿ÌÊ´(etch)ҪעÒâÄÄЩµØ·½£¿ ´ð£º¢ÙPoly µÄCD(³ß´ç´óС¿ØÖÆ£»
¢Ú±ÜÃâGate oxie ±»Ê´¿Ìµô£¬Ôì³É»ù²Ä£¨substrate£©ÊÜËð.
23. ºÎν Gate oxide (Õ¤¼«Ñõ»¯²ã)?
´ð£ºÓÃÀ´µ±Æ÷¼þµÄ½éµç²ã£¬ÀûÓò»Í¬ºñ¶ÈµÄ gate oxide ,¿Éµ÷½ÚÕ¤¼«µçѹ¶Ô
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