PIE¹¤³Ìʦ±Ø±¸

Question &AnswerPIE

1. 2. 3. 4.

PIE

ºÎνPIE? PIEµÄÖ÷Òª¹¤×÷ÊÇʲçÛ?

´ð£ºProcess Integration Engineer(¹¤ÒÕÕûºÏ¹¤³Ìʦ), Ö÷Òª¹¤×÷ÊÇÕûºÏ¸÷²¿ÃŵÄ×ÊÔ´, ¶Ô¹¤ÒÕ³ÖÐø½øÐиÄÉÆ, È·±£²úÆ·µÄÁ¼ÂÊ£¨yield£©Îȶ¨Á¼ºÃ¡£ 200mm£¬300mm Wafer ´ú±íºÎÒâÒå?

´ð£º8´ç¹èƬ(wafer)Ö±¾¶Îª 200mm , Ö±¾¶Îª 300mm¹èƬ¼´12´ç. Ä¿Ç°ÖÐо¹ú¼ÊÏÖÓеÄÈý¸ö¹¤³§²ÉÓöàÉÙmmµÄ¹èƬ(wafer)¹¤ÒÕ£¿Î´À´±±¾©µÄFab4(Ëij§)²ÉÓöàÉÙmmµÄwafer¹¤ÒÕ£¿

´ð£ºµ±Ç°1~3³§Îª200mm(8Ó¢´ç)µÄwafer, ¹¤ÒÕˮƽÒÑ´ï0.13um¹¤ÒÕ¡£Î´À´±±¾©³§¹¤ÒÕwafer½«Ê¹ÓÃ300mm(12Ó¢´ç)¡£

ÎÒÃÇΪºÎÐèÒª300mm?

´ð£ºwafer size ±ä´ó£¬µ¥Ò»wafer ÉϵÄоƬÊý(chip)±ä¶à£¬µ¥Î»³É±¾½µµÍ 200¡ú300 Ãæ»ýÔö¼Ó2.25±¶,оƬÊýÄ¿Ô¼Ôö¼Ó2.5±¶

5.

ËùνµÄ0.13 um µÄ¹¤ÒÕÄÜÁ¦(technology)´ú±íµÄÊÇʲçÛÒâÒ壿

´ð£ºÊÇÖ¸¹¤³§µÄ¹¤ÒÕÄÜÁ¦¿ÉÒÔ´ïµ½0.13 umµÄÕ¤¼«Ïß¿í¡£µ±Õ¤¼«µÄÏß¿í×ö

µÄԽСʱ£¬Õû¸öÆ÷¼þ¾Í¿ÉÒÔ±äµÄԽС£¬¹¤×÷ËÙ¶ÈÒ²Ô½¿ì¡£ ´Ó0.35um->0.25um->0.18um->0.15um->0.13um µÄtechnology¸Ä±äÓÖ´ú±íµÄÊÇʲçÛÒâÒ壿

´ð£ºÕ¤¼«ÏßµÄ¿í£¨¸Ã³ß´çµÄ´óС´ú±í°ëµ¼Ì幤ÒÕˮƽµÄ¸ßµÍ£©×öµÄԽСʱ£¬

¹¤ÒÕµÄÄѶȱãÏà¶ÔÌá¸ß¡£´Ó0.35um -> 0.25um -> 0.18um -> 0.15um -> 0.13um ´ú±í×Åÿһ¸ö½×¶Î¹¤ÒÕÄÜÁ¦µÄÌáÉý¡£

Ò»°ãµÄ¹èƬ(wafer)»ù²Ä(substrate)¿ÉÇø·ÖΪN,PÁ½ÖÖÀàÐÍ£¨type£©,ºÎν N, P-type wafer?

´ð£ºN-type wafer ÊÇÖ¸²ôÔÓ negativeÔªËØ(5¼ÛµçºÉÔªËØ£¬ÀýÈ磺P¡¢As)

µÄ¹èƬ, P-type µÄwafer ÊÇÖ¸²ôÔÓ positive ÔªËØ(3¼ÛµçºÉÔªËØ, ÀýÈ磺B¡¢In)µÄ¹èƬ¡£

6.

7.

8. ¹¤³§ÖйèƬ£¨wafer£©µÄÖÆÔì¹ý³Ì¿É·ÖÄļ¸¸ö¹¤ÒÕ¹ý³Ì(module)£¿

´ð£ºÖ÷ÒªÓÐËĸö²¿·Ö£ºDIFF£¨À©É¢£©¡¢TF(±¡Ä¤)¡¢PHOTO£¨¹â¿Ì£©¡¢ETCH£¨¿ÌÊ´£©¡£ÆäÖÐDIFFÓÖ°üÀ¨FURNACE(¯¹Ü)¡¢WET(ʪ¿Ì)¡¢IMP(Àë×Ó ×¢Èë)¡¢RTP(¿ìËÙÈÈ´¦Àí)¡£TF°üÀ¨PVD(ÎïÀíÆøÏàµí»ý)¡¢CVD(»¯Ñ§ÆøÏàµí»ý) ¡¢CMP(»¯Ñ§»úеÑÐÄ¥)¡£¹èƬµÄÖÆÔì¾ÍÊÇÒÀ¾Ý¿Í»§µÄÒªÇ󣬲»¶ÏµÄÔÚ²»Í¬¹¤ÒÕ¹ý³Ì£¨module£©¼äÖظ´½øÐеÄÉú²ú¹ý³Ì£¬×îºóÔÙÀûÓõçÐԵIJâÊÔ£¬È·±£²úÆ·Á¼ºÃ¡£

Ò»°ã¹èƬµÄÖÆÔì³£ÒÔ¼¸P¼¸M ¼°¹âÕÖ²ãÊý(mask layer)À´´ú±í¹èƬ¹¤ÒÕµÄʱ¼ä³¤¶Ì£¬ÇëÎʼ¸P¼¸M¼°¹âÕÖ²ãÊý(mask layer)´ú±íʲçÛÒâÒ壿

´ð£º¼¸P¼¸M´ú±í¹èƬµÄÖÆÔìÓм¸²ãµÄPoly(¶à¾§¹è)ºÍ¼¸²ãµÄmetal(½ðÊôµ¼Ïß).Ò»°ã0.15um µÄÂß¼­²úƷΪ1P6M( 1²ãµÄPolyºÍ6²ãµÄmetal)¡£¶ø ¹âÕÖ²ãÊý£¨mask layer£©´ú±í¹èƬµÄÖÆÔì±ØÐè¾­¹ý¼¸´ÎµÄPHOTO£¨¹â¿Ì£©. WaferÏÂÏߵĵÚÒ»µÀ²½ÖèÊÇÐγÉstart oxide ºÍzero layer? ÆäÖÐstart oxide µÄÄ¿µÄÊÇΪºÎ£¿

´ð£º¢Ù²»Ï£ÍûÓлú³É·ÖµÄ¹â¿Ì½ºÖ±½ÓÅö´¥Si ±íÃæ¡£

¢ÚÔÚlaser¿ÌºÅ¹ý³ÌÖÐ,Òà¿É±ÜÃâ±»²úÉúµÄ·Û³¾ÎÛȾ¡£

9.

10.

11. ΪºÎÐèÒªzero layer?

´ð£ºÐ¾Æ¬µÄ¹¤ÒÕÓÉÐí¶à²»Í¬²ã´Î¶ÑÕ»¶ø³ÉµÄ, ¸÷²ã´ÎÖ®¼äÒÔzero layerµ±×ö

¶Ô×¼µÄ»ù×¼¡£ 12. Laser markÊÇʲçÛÓÃ;? Wafer ID ÓÖ´ú±íʲçÛÒâÒå?

´ð£ºLaser mark ÊÇÓÃÀ´¿Ìwafer ID, Wafer ID ¾ÍÈçͬ¹èƬµÄÉí·ÝÖ¤Ò»Ñù,

Ò»¸öID´ú±íһƬ¹èƬµÄÉí·Ý¡£ 13. Ò»°ã¹èƬµÄÖÆÔì(wafer process)¹ý³Ì°üº¬ÄÄЩÖ÷Òª²¿·Ö£¿

´ð£º¢ÙÇ°¶Î£¨frontend£©-ÔªÆ÷¼þ(device)µÄÖÆÔì¹ý³Ì¡£

¢Úºó¶Î£¨backend£©-½ðÊôµ¼ÏßµÄÁ¬½Ó¼°»¤²ã£¨passivation£© 14. Ç°¶Î£¨frontend£©µÄ¹¤ÒÕ´óÖ¿ÉÇø·ÖΪÄÇЩ²¿·Ý?

´ð£º¢ÙSTIµÄÐγÉ(¶¨ÒåAAÇøÓò¼°Æ÷¼þ¼äµÄ¸ôÀë)

¢ÚÚåÇøÀë×Ó×¢È루well implant£©ÓÃÒÔµ÷ÕûµçÐÔ ¢ÛÕ¤¼«(poly gate)µÄÐγÉ

¢ÜÔ´/©¼«£¨source/drain£©µÄÐÎ³É ¢Ý¹è»¯Îï(salicide)µÄÐγÉ

15. STI ÊÇʲçÛµÄËõд? ΪºÎÐèÒªSTI?

´ð£ºSTI: Shallow Trench Isolation(dz¹µµÀ¸ôÀë)£¬STI¿ÉÒÔµ±×öÁ½¸ö×é¼þ

£¨device£©¼äµÄ×è¸ô, ±ÜÃâÁ½¸ö×é¼þ¼äµÄ¶Ì·.

16. AA ÊÇÄÄÁ½¸ö×ÖµÄËõд? ¼òµ¥ËµÃ÷ AA µÄÓÃ;?

´ð£ºActive Area, ¼´ÓÐÔ´Çø£¬ÊÇÓÃÀ´½¨Á¢¾§Ìå¹ÜÖ÷ÌåµÄλÖÃËùÔÚ£¬ÔÚÆäÉÏ

ÐγÉÔ´¡¢Â©ºÍÕ¤¼«¡£Á½¸öAAÇøÖ®¼ä±ãÊÇÒÔSTIÀ´×ö¸ôÀëµÄ¡£

17. ÔÚSTIµÄ¿ÌÊ´¹¤ÒÕ¹ý³ÌÖУ¬Òª×¢ÒâÄÄЩ¹¤ÒÕ²ÎÊý£¿

´ð£º¢ÙSTI etch£¨¿ÌÊ´£©µÄ½Ç¶È£»

¢ÚSTI etch µÄÉî¶È£»

¢ÛSTI etch ºóµÄCD³ß´ç´óС¿ØÖÆ¡£ (CD control, CD=critical dimension) 18.

ÔÚSTI µÄÐγɲ½ÖèÖÐÓÐÒ»µÀliner oxide£¨ÏßÐÎÑõ»¯²ã£©, liner oxide µÄÌØÐÔ¹¦ÄÜΪºÎ£¿

´ð£ºLiner oxide Ϊ1100C, 120 min ¸ßί¹ÜÐγɵÄÑõ»¯²ã£¬Æ书ÄÜΪ£º ¢ÙÐÞ²¹½øSTI etch Ôì³ÉµÄ»ù²ÄËðÉË£»

¢Ú½«STI etch Ôì³ÉµÄetch ¼â½Ç¸øÓÚÔ²»¯( corner rounding)¡£

¢Ù

¢Ú¶¨Òå¹â×è1625?Nitride110?PAD Oxide1625?Nitride110?PAD OxideSubstrateSubstrate¢ÜÌîÈëÑõ»¯²ãHDP Oxide¢Û½øÐÐÊ´¿Ì¹â×è5800?HDP1625?Nitride110?PAD Oxide200?Liner Oxide16250?Nitride110?PAD Oxide³ß´ç´óС Ò»°ãÉî¶Èžé4000A~5000AÔ²»¯ ¢ÝSTI CMPSubstrateSubstrate¢ÞÈ¥³ýSiN& OxideÍê³ÉSTI>1400?Nitride110?PAD Oxide110?SAC Oxide½Ç¶È AAÇøSubstrateSubstrateҪעÒâSiN µÄremain ¼°HDP oxide µÄloss ÕâÀïµÄSAC oxide ÊÇÔÚ SiN remove ¼° pad oxide remove ºó£¬ÔÙÖØг¤¹ýµÄ oxide

19. Ò»°ãµÄÚåÇøÀë×Ó×¢Èëµ÷ÕûµçÐÔ¿É·ÖΪÄÇÈýµÀ²½Öè? ¹¦ÄÜΪºÎ£¿

´ð£ºÚåÇøÀë×Ó×¢Èëµ÷ÕûÊÇÀûÓÃÀë×Ó×¢ÈëµÄ·½·¨ÔÚ¹èƬÉÏÐγÉËùÐèÒªµÄ×é¼þ

µç×ÓÌØÐÔ£¬Ò»°ã°üº¬ÏÂÃ漸µÀ²½Ö裺 ¢ÙWell Implant £ºÐγÉN,P ÚåÇø£»

¢ÚChannel Implant£º·ÀÖ¹Ô´/©¼«¼äµÄ©µç£» ¢ÛVt Implant£ºµ÷ÕûVt£¨ãÐÖµµçѹ£©¡£

20. Ò»°ãµÄÀë×Ó×¢Èë²ã´Î£¨Implant layer£©¹¤ÒÕÖÆÔì¿É·ÖΪÄǼ¸µÀ²½Öè? ´ð£ºÒ»°ã°üº¬ÏÂÃ漸µÀ²½Ö裺

¢Ù¹â¿Ì(Photo)¼°Í¼ÐεÄÐγɣ» ¢ÚÀë×Ó×¢Èëµ÷Õû£»

¢ÛÀë×Ó×¢ÈëÍêºóµÄash (plasma(µÈÀë×ÓÌå)ÇåÏ´) ¢Ü¹â¿Ì½ºÈ¥³ý£¨PR strip£©

21. Poly£¨¶à¾§¹è£©Õ¤¼«ÐγɵIJ½Öè´óÖ¿ɷÖΪÄÇЩ?

´ð£º¢ÙGate oxide(Õ¤¼«Ñõ»¯²ã)µÄ³Á»ý£»

¢ÚPoly filmµÄ³Á»ý¼°SiON(ÔÚ¹â¿ÌÖÐ×÷Ϊ¿¹·´Éä²ãµÄÎïÖÊ)µÄ³Á»ý£©£» ¢ÛPoly ͼÐεÄÐγÉ(Photo)£»

¢ÜPoly¼°SiONµÄEtch£»

¢ÝEtchÍêºóµÄash( plasma(µÈÀë×ÓÌå)ÇåÏ´)¼°¹â¿Ì½ºÈ¥³ý£¨PR strip£©£»

¢ÞPolyµÄRe-oxidation£¨¶þ´ÎÑõ»¯£©¡£

22. Poly£¨¶à¾§¹è£©Õ¤¼«µÄ¿ÌÊ´(etch)ҪעÒâÄÄЩµØ·½£¿ ´ð£º¢ÙPoly µÄCD(³ß´ç´óС¿ØÖÆ£»

¢Ú±ÜÃâGate oxie ±»Ê´¿Ìµô£¬Ôì³É»ù²Ä£¨substrate£©ÊÜËð.

23. ºÎν Gate oxide (Õ¤¼«Ñõ»¯²ã)?

´ð£ºÓÃÀ´µ±Æ÷¼þµÄ½éµç²ã£¬ÀûÓò»Í¬ºñ¶ÈµÄ gate oxide ,¿Éµ÷½ÚÕ¤¼«µçѹ¶Ô

²»Í¬Æ÷¼þ½øÐпª¹Ø

ÁªÏµ¿Í·þ£º779662525#qq.com(#Ì滻Ϊ@) ËÕICP±¸20003344ºÅ-4